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| BPW41N Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES * Package type: leaded * Package form: side view * Dimensions (in mm): 5 x 4 x 6.8 * Radiant sensitive area (in mm2): 7.5 * High radiant sensitivity * Daylight blocking filter matched with 940 nm emitters * Fast response times * Angle of half sensitivity: = 65 * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with 94 8480 DESCRIPTION BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. APPLICATIONS * High speed detector for infrared radiation * Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT BPW41N Note Test condition see table "Basic Characteristics" Ira (A) 45 (deg) 65 0.5 (nm) 870 to 1050 ORDERING INFORMATION ORDERING CODE BPW41N Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW C C C C K/W www.vishay.com 390 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81522 Rev. 1.5, 08-Sep-08 BPW41N Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit Voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time Note Tamb = 25 C, unless otherwise specified VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm TEST CONDITION IR = 100 A, E = 0 VR = 10 V, E = 0 VR= 0 V, f = 1 MHz, E = 0 VR= 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm, VR = 5 V SYMBOL V(BR) Iro CD CD Vo TKVo Ik TKIk Ira 43 MIN. 60 2 70 25 350 - 2.6 38 0.1 45 65 950 870 to 1050 4 x 10-14 100 100 40 30 TYP. MAX. UNIT V nA pF pF mV mV/K A %/K A deg nm nm W/ Hz ns ns p 0.5 NEP tr tf BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified I ra rel - Relative Reverse Light Current 1.4 1000 1.2 VR = 5 V = 950 nm Ira - Reverse Light Current (A) 100 1.0 10 0.8 1 = 950 nm VR = 5 V 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (C) 0.1 0.01 94 8414 0.1 1 10 94 8409 E e - Irradiance (mW/cm) Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature Fig. 2 - Reverse Light Current vs. Irradiance Document Number: 81522 Rev. 1.5, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 391 BPW41N Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant 0 100 10 20 30 Srel - Relative Radiant Sensitivity I ra - Reverse Light Current (A) 1 mW/cm2 0.5 mW/cm2 40 1.0 0.9 0.8 50 60 70 80 0.6 0.4 0.2 0 = 950 nm 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 0.7 1 0.1 94 8415 1 10 100 94 8406 V R - Reverse Voltage (V) Fig. 3 - Reverse Light Current vs. Reverse Voltage Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 80 CD - Diode Capacitance (pF) 60 E=0 f = 1 MHz 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage S ( ) rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 750 850 950 1050 1150 94 8408 - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength www.vishay.com 392 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81522 Rev. 1.5, 08-Sep-08 - Angular Displacement BPW41N Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 5 0.2 A C 4 0.2 Sensitive area (2.05) Chip position 0.3 0.3 19.8 - 0.8 8.9 6.8 < 0.5 < 0.65 Area not plane 0.45 + 0.01 - 0.05 2.3 0.2 2.5 nom. 0.4 + 0.1 - 0.05 (2.8) Drawing-No.: 6.544-5108.01-4 Issue:1; 01.07.96 96 12195 technical drawings according to DIN specifications Document Number: 81522 Rev. 1.5, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 393 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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